型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 齐纳二极管描述: DIODE ZENER 3.9V 0.5W(1/2W) LL34924320+¥0.195850+¥0.1813100+¥0.1740300+¥0.1682500+¥0.16391000+¥0.16105000+¥0.158110000+¥0.1552
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品类: 齐纳二极管描述: 稳压二极管 TDZ5V6J/SOD2/REEL 13" Q1/T1 *S680420+¥0.147250+¥0.1363100+¥0.1308300+¥0.1264500+¥0.12321000+¥0.12105000+¥0.118810000+¥0.1166
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品类: 齐纳二极管描述: 齐纳二极管 500mW,TDZxJ 系列,Nexperia ### 齐纳二极管,Nexperia502820+¥0.421250+¥0.3900100+¥0.3744300+¥0.3619500+¥0.35261000+¥0.34635000+¥0.340110000+¥0.3338
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品类: 齐纳二极管描述: 稳压二极管 TDZ2V4J/SOD2/REEL 13" Q1/T1 *S813520+¥0.147250+¥0.1363100+¥0.1308300+¥0.1264500+¥0.12321000+¥0.12105000+¥0.118810000+¥0.1166
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品类: SCR晶闸管描述: Module; diode/thyristor; 1.4kV; 160A; BG-PB60-1; Ufmax:1.62V81031+¥761.179110+¥734.471150+¥731.1326100+¥727.7941150+¥722.4525250+¥717.7786500+¥713.10471000+¥707.7631
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品类: 双极性晶体管描述: Trans GP BJT PNP 50V 0.15A 320mW 3Pin SOT-23112120+¥0.167450+¥0.1550100+¥0.1488300+¥0.1438500+¥0.14011000+¥0.13765000+¥0.135210000+¥0.1327
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品类: MOS管描述: N - 沟道增强型“单一特征尺寸” POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET5505
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品类: TVS二极管描述: PAR® 瞬态电压抑制器表面安装单向 600W,TA6F 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor927920+¥0.618350+¥0.5725100+¥0.5496300+¥0.5313500+¥0.51751000+¥0.50845000+¥0.499210000+¥0.4901
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品类: MOS管描述: N 通道 MOSFET,Toshiba ### MOSFET 晶体管,Toshiba10625+¥3.630225+¥3.361350+¥3.1730100+¥3.0924500+¥3.03862500+¥2.97135000+¥2.944510000+¥2.9041
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品类: 分立器件描述: Stud Thyristor66581+¥292.374910+¥284.747750+¥278.9002100+¥276.8663200+¥275.3408500+¥273.30691000+¥272.03572000+¥270.7645
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品类: 分立器件描述: Diode Rectifier Bridge Single 800V 95A 7-Pin Case T-712281+¥127.931810+¥124.594450+¥122.0358100+¥121.1458200+¥120.4783500+¥119.58841000+¥119.03222000+¥118.4759